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PD - 96999B
IRF6616
DirectFET Power MOSFET
l l l l l l l
RoHS compliant containing no lead or bormide Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
40V max 20V max 3.7m@ 10V 4.6m@ 4.5V
Qg
tot
Qgd
9.4nC
Qgs2
2.4nC
Qrr
33nC
Qoss
15nC
Vgs(th)
1.8V
29nC
MX
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST MQ MX MT MP
DirectFET ISOMETRIC
Description
The IRF6616 combines the latest HEXFET(R) Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve low combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6616 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6616 is ideal for secondary side synchronous rectification applications up to 100W, and can also be used in some non-isolated synchronous buck applications where 30V devices do not provide enough voltage headroom.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25C ID @ TA = 70C ID @ TC = 25C IDM EAS IAR
12
Typical RDS(on) ( m)
Max.
Units
V
Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Single Pulse Avalanche Energy Avalanche CurrentAg
g
e e f
h
VGS, Gate-to-Source Voltage (V)
40 20 19 15 106 150 36 15
6 5 4 3 2 1 0 0 10 20 30 ID= 15A VDS = 32V VDS= 20V
A
mJ A
10 8.0 6.0 4.0 2.0 0 2.0 4.0 6.0 8.0
ID = 19A T J = 125C
T J = 25C 10.0
40
VGS, Gate-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
Fig 1. Typical On-Resistance vs. Gate Voltage Notes:
Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.32mH, RG = 25, IAS =15A.
11/16/05
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IRF6616
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min.
40 --- --- --- 1.35 --- --- --- --- --- 75 --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ.
--- 37 3.7 4.6 1.8 -5.5 --- --- --- --- --- 29 8.6 2.4 9.4 8.6 12 15 1.3 15 19 21 4.4 3765 560 285
Max.
--- --- 5.0 6.2 2.25 --- 1.0 150 100 -100 --- 44 --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Units
Conditions
VGS = 0V, ID = 250A V mV/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 19A c VGS = 4.5V, ID = 15A c V mV/C A nA S VDS = 32V, VGS = 0V VDS = 32V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 20V, ID = 15A VDS = 20V nC VGS = 4.5V ID = 15A See Fig. 15 nC
VDS = VGS, ID = 250A
VDS = 16V, VGS = 0V VDD = 16V, VGS = 4.5V c ID = 15A
ns
Clamped Inductive Load VGS = 0V
pF
VDS = 20V = 1.0MHz
Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) d Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge --- --- --- --- --- 0.8 15 33 150 1.0 23 50 V ns nC
Min.
---
Typ.
---
Max.
110
Units
A
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 15A, VGS = 0V c TJ = 25C, IF = 15A di/dt = 500A/s c
Notes:
Pulse width 400s; duty cycle 2%. Repetitive rating; pulse width limited by max. junction temperature.
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IRF6616
Absolute Maximum Ratings
PD @TA = 25C PD @TA = 70C PD @TC = 25C TP TJ TSTG Power Dissipation Power Dissipation Power Dissipation Peak Soldering Temperature Operating Junction and Storage Temperature Range
f
Parameter
Max.
2.8 1.8 89 270 -40 to + 150
Units
W
C
Thermal Resistance
RJA RJA RJA RJC RJ-PCB Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Case Junction-to-PCB Mounted Linear Derating Factor
100
g dg eg fg
Parameter
Typ.
--- 12.5 20 --- 1.0 0.022
Max.
45 --- --- 1.4 ---
Units
C/W
A
W/C
Thermal Response ( Z thJA )
10
D = 0.50 0.20 0.10 0.05 0.02 0.01
J R1 R1 J 1 2 R2 R2 R3 R3 3 R4 R4 A 1 2 3 4 4 A
1
Ri (C/W)
1.2801 8.7256 21.750 13.251
i (sec)
0.000322 0.164798 2.25760 69
0.1
SINGLE PULSE ( THERMAL RESPONSE )
0.01
Ci= i/Ri Ci i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc
1E-005 0.0001 0.001 0.01 0.1 1 10 100
0.001 1E-006
t1 , Rectangular Pulse Duration (sec)
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes: Surface mounted on 1 in. square Cu board, steady state. Used double sided cooling , mounting pad. Mounted on minimum footprint full size board with metalized back and with small clip heatsink.
TC measured with thermocouple incontact with top (Drain) of part. R is measured at TJ of approximately 90C.
Surface mounted on 1 in. square Cu board (still air).
Mounted to a PCB with small clip heatsink (still air)
Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air)
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IRF6616
1000
TOP VGS 10V 5.0V 4.5V 3.5V 3.0V 2.8V 2.5V
1000
TOP VGS 10V 5.0V 4.5V 3.5V 3.0V 2.8V 2.5V
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
BOTTOM
100
BOTTOM
2.5V
10
10
2.5V
1 0.1 1
60s PULSE WIDTH Tj = 25C
10 100
60s PULSE WIDTH Tj = 150C
1 0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 4. Typical Output Characteristics
1000
Fig 5. Typical Output Characteristics
2.0 ID = 15A
ID, Drain-to-Source Current ()
100
Typical RDS(on) (Normalized)
T J = 150C T J = 25C T J = -40C
1.5
V GS = 10V V GS = 4.5V
10
1.0
1.0
VDS = 10V 60s PULSE WIDTH
0.1 1.5 2.0 2.5 3.0 3.5 4.0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (C)
VGS, Gate-to-Source Voltage (V)
Fig 6. Typical Transfer Characteristics
100000
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd
Fig 7. Normalized On-Resistance vs. Temperature
12 T J = 25C 10
Typical RDS(on) ( m)
C oss = C ds + C gd
C, Capacitance(pF)
10000 Ciss
8
Vgs = 3.5V Vgs = 4.0V Vgs = 4.5V Vgs = 5.0V Vgs = 10V
6
1000
Coss Crss
4
100 1 10 VDS, Drain-to-Source Voltage (V) 100
2 0 20 40 60 80 100 120 140 160
ID, Drain Current (A)
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
Fig 9. Typical On-Resistance vs. Drain Current and Gate Voltage
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IRF6616
1000.00
1000
OPERATION IN THIS AREA LIMITED BY R DS (on)
100.00
10.00
T J = 150C T J = 25C T J = -40C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
100sec 1msec 10msec T A = 25C Tj = 150C Single Pulse 0 1 10 100 1000
1.00
1
0.10
VGS = 0V 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, Source-to-Drain Voltage (V)
0.1 VDS , Drain-to-Source Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
120 100
ID, Drain Current (A)
Typical VGS(th) Gate threshold Voltage (V)
2.5
Fig11. Maximum Safe Operating Area
80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (C)
2.0
ID = 250A
1.5
1.0 -75 -50 -25 0 25 50 75 100 125 150
T J , Junction Temperature ( C )
Fig 12. Maximum Drain Current vs. Case Temperature
200
Fig 13. Typical Threshold Voltage vs. Junction Temperature
ID 3.7A 4.3A BOTTOM 15A
TOP
EAS, Single Pulse Avalanche Energy (mJ)
160
120
80
40
0 25 50 75 100 125 150
Starting T J, Junction Temperature (C)
Fig 14. Maximum Avalanche Energy Vs. Drain Current
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IRF6616
Current Regulator Same Type as D.U.T.
Id Vds
50K 12V .2F .3F
Vgs
D.U.T. VGS
3mA
+ V - DS
Vgs(th)
IG
ID
Current Sampling Resistors
Qgs1 Qgs2
Qgd
Qgodr
Fig 15a. Gate Charge Test Circuit
Fig 15b. Gate Charge Waveform
V(BR)DSS
15V
tp
DRIVER
VDS
L
VGS RG
D.U.T
IAS
+ V - DD
A
20V
tp
0.01
I AS
Fig 16b. Unclamped Inductive Waveforms
Fig 16a. Unclamped Inductive Test Circuit
LD VDS
90%
+
VDD D.U.T VGS Pulse Width < 1s Duty Factor < 0.1%
VDS
10%
VGS
td(on) tr td(off) tf
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
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IRF6616
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * * di/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage
Body Diode
Forward Drop
Inductor Current Inductor Curent
Ripple 5% ISD
* VGS = 5V for Logic Level Devices Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET(R) Power MOSFETs
DirectFET Board Footprint, MX Outline (Medium Size Can, X-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
G = GATE D = DRAIN S = SOURCE
D S G S D
D
D
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DirectFET Outline Dimension, MX Outline (Medium Size Can, X-Designation).
IRF6616
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
DIMENSIONS
METRIC MAX CODE MIN 6.35 A 6.25 5.05 B 4.80 3.95 C 3.85 0.45 D 0.35 0.72 E 0.68 0.72 F 0.68 1.42 G 1.38 0.84 H 0.80 0.42 J 0.38 K 0.88 1.01 2.41 L 2.28 0.70 M 0.59 0.08 N 0.03 0.17 P 0.08 IMPERIAL MIN MAX 0.246 0.250 0.189 0.201 0.152 0.156 0.014 0.018 0.027 0.028 0.027 0.028 0.054 0.056 0.032 0.033 0.015 0.017 0.035 0.039 0.090 0.095 0.023 0.028 0.001 0.003 0.003 0.007
DirectFET Part Marking
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IRF6616
DirectFET Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6616). For 1000 parts on 7" reel, order IRF6616TR1) STANDARD OPTION METRIC CODE MIN MAX A 330.0 N.C B 20.2 N.C C 12.8 13.2 D 1.5 N.C E 100.0 N.C F N.C 18.4 G 12.4 14.4 H 11.9 15.4 REEL DIMENSIONS (QTY 4800) TR1 OPTION (QTY 1000) IMPERIAL IMPERIAL METRIC MIN MIN MAX MAX MIN MAX 12.992 6.9 N.C N.C 177.77 N.C 0.795 0.75 N.C N.C 19.06 N.C 0.504 0.53 0.50 0.520 13.5 12.8 0.059 0.059 1.5 N.C N.C N.C 3.937 2.31 58.72 N.C N.C N.C N.C N.C N.C 0.53 0.724 13.50 0.488 0.47 11.9 N.C 0.567 12.01 0.469 0.47 11.9 N.C 0.606 12.01
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/05
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